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Semiconductor Analyzer

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Original price was: $130.23.Current price is: $78.13.

Category:
Meta:
Product Dimensions : 4 X 0.5 X 2.75 Inches; 2 Ounces
Power Source : Battery Powered
Brand : Unbranded
Batteries : 1 Aaa Batteries Required. (included)
gtin13 : Does not apply
Item Weight : 2 Ounces
UPC : Does not apply
Color : Black And Blue
MPN : Details_In_Description
Style : Standard

Semiconductor Analyzer Automatic component identification automatic identification of connection pins identification of special features such as detection of protection diodes and detection of shunt resistors bipolar transistors: measurement of current gain and leakage current, silicon and germanium diode detection threshold voltage measurement for enrichment MOSFETs forward voltage measurement for diodes, LEDs and base-emitter junctions of transmissions istors exti Specification Summary at 20°C (68°F) unless otherwise specified Short circuit peak current cut: mA up to mA Permanent short circuit peak voltage: V up to V Transistor: *** FEATURES: automatic identification of components automatic identification of connection pins identification of special features such as detection of protection diodes and detection of shunt resistors bipolar transistors: measurement of current gain and leakage current, silicon and germanium diode detection threshold voltage measurement for enrichment MOSFETs forward voltage measurement for diodes, LEDs and base-junctions Transistor transmitter automatic and manual extinguishing *** SPECIFICATIONS: Specification Summary at 20°C (68°F) unless otherwise specified short circuit peak current cut off: mA up to mA Permanent short circuit peak voltage: V up to V transistor: gain range (HFE): 4 – 65,000 Gain precision: ± 3% ± 5 Hfe maximum collector-to-emitter voltage (VCEO): V – V base-emitter voltage accuracy VBE: -2% -20 mV up to +2% + 20 mV base-emitter voltage VBE for Darlington transistor (shunted): V – V ( 75 V – V) base-emitter shunt resistance threshold: 50 kΩ – 70 kΩ collector current BJT: mA – mA acceptable leakage current BJT: mA MOSFET: gate-source voltage range: V – V accuracy of only he: -2% -20 mV up to +2% + 20 mV drain current: mA – 255 mA gate resistance: 8 kΩ depletion drain current: mA drain-source currents JFET: mA – mA thyristor/Triac: gate current: mA Hold: mA diode: test current: mA voltage accuracy: -2% -20 mV up to +2% + 20 mV forward voltage for LED identification: V – V short-circuit threshold: 10 Ω battery: type: MN21 / L1028 / GP23A 12 V alkaline range. Voltage: 7. 50 V – 12 V alarm threshold: V. Dimensions: 103 x 70 x 20 mm ( x x inches). Weight per product (nett): kg ( oz). Working temperature: 0 °C ~ 50 °C (32F ~ 122F)

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